A Review of Sensor Devices Applied Using Gallium Nitride and Its Properties

Abstract

Devices made of gallium nitride (GaN) have high electron mobilities, large band gaps 3.4 ev, and low dielectric constants. because it uses less energy overall than normal Si devices and decreases the volume, weight and power consumption of power electronic systems., it is a good replacement material for sensors, radar, and other silicon-based applications. In this article, we review the features and advancement of cutting-edge GaN power device architectures, assess the condition of the research, and project the future of GaN device applications. The difficulties of GaN devices were also fully examined with regard to the sensitivity and effectiveness of the sensor systems.