Pure and Doped Gallium Nitride-Based Gas Sensor: A Review

Authors

  • Sarmad Fawzi Hamza Alhasan
  • Mothana A. Hassan
  • Zaid T. Salim
  • Reem M. Khalaf
  • Makram A. Fakhri
  • Motahher A. Qaeed
  • Ahmed A. Al-Amiery
  • Subash C. B. Gopinath

DOI:

https://doi.org/10.58915/ijneam.v18iJune.2358

Abstract

This paper shows how gallium-nitride-based gas sensors are frequently used for detecting toxic gases and vapors and gives an overview of how to use them with different layer thicknesses in order to detect multi-spectral ranges and to obtain high performance, high response, high speed, and low cost for gas sensor devices. The earlier published works are summarized, as is the gallium nitride material grown on different substrate materials such as silicon, sapphire, or quartz using different growth methods to fabricate sensors used in wide application fields such as environmental control, industrial monitoring, and household safety. GaN material-based gas sensors are considered to be promising to open a new generation of fields due to their virtues for designing high temperature, high frequency, and high power sensors.

Keywords:

Gas sensors, Electrochemical sensors, Doped Gallium nitride, Porous silicon, Doped GaN heterostructure

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Published

23-07-2025

How to Cite

[1]
Sarmad Fawzi Hamza Alhasan, “Pure and Doped Gallium Nitride-Based Gas Sensor: A Review”, IJNeaM, vol. 18, no. June, pp. 227–240, Jul. 2025.