International Journal of Nanoelectronics and Materials (IJNeaM) <p style="text-align: justify;">IJNeaM aims to publish original work of importance in the fields of nanoscience and engineering. Topics covered including Theoretical, Simulation, Synthesis, Design and Fabrication of Nanomaterials and Nanodevices; Metals, Insulators, and Semiconductors with a focus on Electronic, Structural, Magnetic, Optical, Thermal, Transport, Mechanical and other properties for the specialists in Engineering, Chemistry, Physics and Materials Science. IJNeaM accepts submission in the form of Reviews, Research Articles, Short Communications, and selected conference papers.</p> PENERBIT UNIVERSITI MALAYSIA PERLIS en-US International Journal of Nanoelectronics and Materials (IJNeaM) 1985-5761 Determination of continuous electrical conductivity parameters and their influence on Partial Replacement Of Antimony With Sn In The Ge20Te72In8 Chalcogenide Glass <p>In the present work, the changes in electrical conductivity upon partial replacement of antimony by Tin (Sn) in the ternary alloy <br>prepared by the molten cooling method were synthesized and studied. The electrical measurements were performed on Ge20Te72In8-<br>xSnx Chalcogenide glass alloy with x = 0, 2, 4, and 6. The dark conductivity (σd) increases with the increase in temperature in all the <br>samples under the experiment. Observations of data were made at low (300 – 335K), medium (335 – 365K), and high temperatures <br>(365 – 400K) across three distinct regions regarding electrical conductivity. For each of the three conduction regions, the factor that <br>precedes the exponent and the effective energies were calculated using electrical conductivity measurements as a function of <br>temperature. It was found that all of them were affected by an increase in the value of Sn. A numerical analysis of the conductivity <br>equation was also carried out for the densities of the energy for the extended states, localized states, and at the Fermi level. It has <br>been observed that all of them change with the change in the value of Sn</p> Laheeb A. Mohammed Zainab J. Neamah Anaam W. Watan Kareem Ali Jasim Auday H. Shaban Copyright (c) 2024 International Journal of Nanoelectronics and Materials (IJNeaM) 2024-07-12 2024-07-12 17 3 323 326