Morphological and Optical Studies of GaN/P-Si Nanostructure Using Pulsed Laser Deposition Method

Abstract

This article discusses the successful deposition of gallium nitride (GaN) thin films on porous silicon (P-Si) substrates using pulsed laser deposition (PLD) techniques. The primary objective is to develop a high-efficiency GaN/P-Si heterojunction photodetector. Porous silicon was prepared through a photo-electrochemical etching process, resulting in a high-surface-area template that enhances both the adhesion of the GaN film and its optoelectronic properties. Surface morphology analysis, conducted using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), revealed a well-defined nanostructured GaN surface characterized by moderate roughness and a densely packed arrangement of nanoparticles. These features optimize photon absorption and facilitate efficient charge carrier transport. Energy-dispersive X-ray spectroscopy (EDS) further confirmed the successful integration of materials through elemental composition analysis.