Optical properties of Al2O3 thin film deposited by pulsed laser deposition technique

Abeer R. Abbas; Ali A. Alwahib; Makram A. Fakhri; Motahher A. Qaeed; Subash C.B. Gopinath

doi:10.58915/ijneam.v18i2.2124

Authors

Abeer R. Abbas Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq
Ali A. Alwahib Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq
Makram A. Fakhri Laser and Optoelectronic Department, University of Technology-Iraq, Baghdad, Iraq
Motahher A. Qaeed Physics Department, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia
Subash C.B. Gopinath Institute of Nano Electronic Engineering, University Malaysia Perlis (UniMAP), 01000 Kangar, Perlis, Malaysia; Faculty of Chemical Engineering & Technology, University Malaysia Perlis (UniMAP), 02600 Arau, Perlis, Malaysia and Micro System Technology, Centre of Excellence (CoE), University Malaysia Perlis (UniMAP), Pauh Campus, 02600 Arau, Perlis, Malaysia

DOI:

https://doi.org/10.58915/ijneam.v18i2.2124

Abstract

An aluminum oxide (Al2O3) thin film has been grown on a quartz substrate by the pulsed laser deposition (PLD) technique at room temperature under a vacuum pressure of 10–2m bar at different laser wavelengths (1064 nm, 532 nm, and 355 nm). The optical properties concerning the absorption, transmission spectra, and energy gap were studied for the prepared thin film due to UV-visible spectrometer at room temperature with wavelength range (200-1000 nm). The absorption peak is 197 nm at wavelength 1064 nm, 196 nm at wavelength 532 nm, and 195 nm at wavelength 355 nm. The optical energy gap is an essential parameter for investigating thin films' properties. The value of the direct energy gap (Eg) for the prepared films was derived from the graph relationship between
(ℎʋ h) and the energy gap (αhν)2 values for the various wavelengths (4.5 eV at 1064 nm, 5.1 eV at 532 nm, and 5.5 eV at 355nm), indicating the potential use of the thin film as gas sensors.