Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device

Naeemul Islam; Mohamed Fauzi Packeer Mohamed; Siti Fatimah Abd Rahman; Mohd Syamsul; Hiroshi Kawarada; Alhan Farhanah Abd Rahim

doi:10.58915/ijneam.v17i2.684

Authors

Naeemul Islam School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
Mohamed Fauzi Packeer Mohamed School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
Siti Fatimah Abd Rahman School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
Mohd Syamsul Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Bayan Lepas 11900, Pulau Pinang, Malaysia and Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan
Hiroshi Kawarada Faculty of Science and Engineering, Waseda University, Tokyo 169-8555, Japan
Alhan Farhanah Abd Rahim Electrical Engineering Studies, College of Engineering, Universiti Teknologi MARA, , Cawangan Pulau Pinang, 13500 Permatang Pauh, Pulau Pinang, Malaysia.

DOI:

https://doi.org/10.58915/ijneam.v17i2.684

Abstract

In recent years, Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have attracted interest in high-power and high-frequency applications. The breakdown mechanism in E-mode GaN MISHEMTs with carbon doping in the GaN buffer grown on a Silicon (Si) substrate (Sub) was investigated using technology computer-aided design simulations. Results showed that GaN MISHEMTs without Si Sub had a breakdown voltage (BV) of 600 V. However, after adding Si Sub to the GaN buffer layer, the electric field (E_F) increased, creating a vertical breakdown through the total buffer thickness, therefore, BV was reduced to around 240 V. On the other hand, BV is increased to approximately >1100 V, and the Electric field is reduced after employing a carbon deep acceptor with the proper doping concentration in this device. The GaN MISHEMTs with Si Sub is presented as threshold voltage +1.5 V with transconductance of 700 mS/mm, which is an excellent result compared to GaN MISHEMTs without Si Sub. Eventually, the study device depicted higher BV performance compared to other C-doped GaN HEMT devices. This suggests that the designed GaN MISHEMTs device could effectively be used in power semiconductor devices with optimum performance.