Optical Investigators of InGaN/P-Si Nanostructures Using Pulsed Laser Deposition Method

Abstract

Successfully deposited Indium gallium nitride (InGaN) thin films onto porous silicon (P-Si) substrates by pulsed laser deposition (PLD). Electrochemical etching is applied to the P-Si substrate to achieve a high surface area, facilitating enhanced adhesion and uniform growth of the InGaN layers. The formation of a wurtzite-phase InGaN structure, with pronounced diffraction peaks observed at the (002) and (004) planes, reflecting strong film–substrate interaction and high crystallinity, is confirmed by X-ray diffraction (XRD) measurements—a significant peak at 203.872 cm⁻¹, characteristic of InGaN vibrational modes revealed by a Raman spectroscopy. Photoluminescence (PL) analysis exhibited emission peaks at 510 nm, 700 nm, and 850 nm, corresponding respectively to band-edge transitions, deep-level defect emissions, and strain-induced states at the InGaN/P-Si interface. Collectively, these results show that InGaN/P-Si heterostructure demonstrates good optoelectronic properties, underscoring its viability for ultraviolet-visible-near-infrared photodetectors, light-emitting diodes, and a wide range of advanced optoelectronic device applications.