Physical Properties of HfO2 Nano Structures Deposited using PLD

Abstract

On Quartz substrates, high purity transparent conductive the Di-Oxide of the (HfO2) Nano and micro-structure films were successfully coated. The method of (PLD) Deposition using Pulsed Laser, and the influence of laser energy was investigated. The XRD results revealed two distinct phases, cubic and monoclinic crystal shapes. Peaks in the Fourier-transform infrared (FTIR) spectra showed that HfO2 nanofilm was forming.The findings of the optical characteristics reveal an excellent transparency of nearly 80% (89 percent). As the laser wavelength decreases, the optical energy band gap values for Nanostructure of HfO2 were prepared, with values ranging from 5.24 to 5.53 eV. Also, the EDX results showed the appearance of hafnium peaks and oxygen peaks in varying proportions, which confirms that hafnium oxide is definitely obtained The results of the AFM reveal that when the pulsed laser intensity increases, the average grain diameter values increase from 52.96 to 74.54 nm. With regard to optimum pulsed laser energy, the based on I-V characterization, the generated factor ideality for created diodes was discovered to be decreasing, and the corresponding values of the barrier height grew. The ideality factor of the diode made the optimum pulsed laser energy (1800 mJ) was greater (n=3.1).