A review of field-effect transistor transducing system in quantum transport measurements

Authors

  • Theivasanthi Thirugnanasambandana Graphene Solutions Laboratory, Department of Physics, Kalasalingam Academy of Research and Education (Deemed University), Krishnankoil 626126, Tamil Nadu, India
  • Subash C. B. Gopinath Department of Neonatology, Saveetha Medical College & Hospital, Saveetha Institute of Medical and Technical Sciences, Chennai 602105, Tamil Nadu, India and Faculty of Chemical Engineering & Technology and Institute of Nano Electronic Engineering, Universiti Malaysia Perlis (UniMAP), 02600 Arau, Perlis, Malaysia

Keywords:

Quantum sensing, Field effect transistor, Food security, Water quality analysis

Abstract

Field-effect transistor (FET)-based sensors have entered the market as they have high sensitivity and are portable electronic devices. Their performance has been enhanced by coating smart nanomaterials in the channel of the FET device as sensing elements. They find applications in medicine, environmental monitoring and food industries. Quantum materials exhibit quantum mechanical properties that are useful for high precision measurements. Quantum sensing technologies will become more efficient when integrated with the fields of artificial intelligence and internet of things. They can measure various physical parameters such as magnetic field and gravity as they benefit from quantum phenomena such as entanglement and quantum interference. They are superior to conventional sensing devices as the sensing quantum materials exhibit wavelike nature and the property of entanglement in which two or more particles are intertwined regardless of the distance between them. Quantum sensors can provide the solution for a big demand of accurate and reliable measures existing globally. The market of quantum sensing grows faster when compared to other kinds of quantum technologies such as quantum computing and quantum communication. Measurements of many physical parameters with quantum sensing have been demonstrated practically and have been made as commercial. Even at its infant stage, this technology is capable for doing business and highly applicable for various industries. Field-effect transistor-based sensors possess high charge sensitivity, low power consumption, scalability and compatibility with advanced semiconductor devices. Detection of electrical, magnetic, optical, and biochemical signals with high precision can be achieved using low-dimensional materials and quantum transport engineering. This work explores various FET transistors including graphene FETs, carbon nanotube FETs, and two-dimensional material-based transistors with quantum confinement and carrier transport properties. Quantum phenomenon such as quantum tunneling, Coulomb blockade, ballistic transport, and surface charge modulation are also discussed. The applications of FET-based quantum sensors in spin detection, magnetic field sensing, biosensing, environmental monitoring, and quantum information technologies are introduced. The opportunities in quantum sensing to develop highly sensitive, miniaturized, and energy-efficient sensing devices are also explained in detail.To inline the potentials of FET into the current cutting-edge scenario, this overview explored the fundamentals of FET in quantum sensing and updated.

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Published

12-10-2026

How to Cite

[1]
Theivasanthi Thirugnanasambandana and Subash C. B. Gopinath, “A review of field-effect transistor transducing system in quantum transport measurements”, IJNeaM, vol. 19, no. 4, pp. 619–626, Oct. 2026.

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