Enhanced InGaAs/AlAs RTD quantum device with frequency multiplier application

Wan Nurnabilah Zaharim; Mohamed Fauzi Packeer Mohamed; Asrulnizam Abd Manaf; Mohamad Khairi Ishak; Ng Sha Shiong; Muhammad Zeshan Ali; Shahrir Rizal Kasjoo; Mohamad Adzhar Md Zawawi; Siti Fatimah Abd Rahman

doi:10.58915/ijneam.v18i4.2668

Authors

Wan Nurnabilah Zaharim School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
Mohamed Fauzi Packeer Mohamed School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia
Asrulnizam Abd Manaf Collaborative Microelectronic Design Excellence Centre (CEDEC), Universiti Sains Malaysia, 11900 Bayan Lepas, Pulau Pinang, Malaysia
Mohamad Khairi Ishak Department of Electrical and Computer Engineering, Ajman University, Ajman, United Arab Emirates
Ng Sha Shiong Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang 11800, Malaysia
Muhammad Zeshan Ali Department of Materials, School of Engineering and Technology, National Textile University, 37610, Faisalabad, Pakistan
Shahrir Rizal Kasjoo Faculty of Electronic Engineering and Technology, Universiti Malaysia Perlis, 02600 Arau, Perlis, Malaysia
Mohamad Adzhar Md Zawawi School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia and Applied College, Princess Nourah bint Abdulrahman University, Riyadh 11671, Saudi Arabia
Siti Fatimah Abd Rahman School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang, Malaysia

DOI:

https://doi.org/10.58915/ijneam.v18i4.2668

Keywords:

Quantum device, Frequency multiplier, Resonant tunneling diode

Abstract

This study presents the development of advanced resonant tunneling diodes (RTD) based on InGaAs/AlAs that have an impressive 80% indium content in the quantum well. These cutting-edge diodes were meticulously grown in-house using the precise technique of molecular beam epitaxy. The proposed RTD showcased remarkable negative-differential resistance characteristics, achieving a cm^-2 peak current density (Jp) at V, and a peak-to-valley current ratio of 8.5. A large-signal model of the fabricated RTD was developed in LTspice using experimental current-voltage (I-V) data, enabling the simulation of an RTD-based frequency multiplier circuit. A frequency multiplier with a multiplication factor of three (x3) was created and tested by arranging two RTDs in series to introduce non-linearity in the circuit. The experiment successfully demonstrated a threefold increase in frequency, converting an input signal of 166 MHz (3.07 mW) to an output frequency of 500 MHz (51.57 µW). The results highlighted the potential of InGaAs/AlAs RTDs for cost-effective ultra-high-frequency applications, particularly for communication systems, radar, and signal processing.