Numerical Simulation, Electrostatic and Physical Compact Modeling of C8-BTBT-C8 Organic Thin Film Transistor

Shubham Dadhich; Garima Mathur; A.D.D. Dwivedi

doi:10.58915/ijneam.v17i2.693

Authors

Shubham Dadhich Research Scholar, Department of Electrical and Electronics Engineering, Poornima University Jaipur, Vidhani, India
Garima Mathur Department of Electrical and Electronics Engineering, Poornima University Jaipur, Vidhani, India
A.D.D. Dwivedi School of Electronics Engineering, VIT University Vellore, Vellore, India

DOI:

https://doi.org/10.58915/ijneam.v17i2.693

Abstract

This paper presents numerical simulation and compact modeling of 2,7-Dioctyl {1} benzothieno {3,2-b}{1} benzothiophene (C8-BTBT-C8) organic semiconductor-based TFT. It shows the entire modeling process flow of this organic semiconductor (OSC) and tests the device realization using a ring oscillator. The paper comprises OSC characterisation, band-gap modeling, electrostatic modeling, and capacitance modeling. The TCAD model consists of the Hopping and Pool Frenkel premise and characterizes the Density of State (DOS) for traps in deep and tail states. The findings from this research provide valuable information for improving OTFT models, enhancing their predictive accuracy, and advancing the understanding of organic semiconductor device behavior. The electrostatics demonstrate device structure dependency