A full range fully analytical drain current model of double gate junctionless field effect transistor with triangle shaped spacer

Abstract

A full range and fully analytical model for the drain current of a symmetric double gate junctionless field effect transistor with a spacer of triangular shape is presented in the paper. The model is valid in the complete range of operation of the device, i.e., all four modes of operation namely- subthreshold, bulk current, flatband and accumulation modes. The approach to obtain the model is channel resistance based. The resistance of the channel of the device has been obtained from charge enclosed within it. The resistances of the model vary in different modes. Therefore, four expressions are obtained for four different modes of operation namely sub threshold, bulk current, flatband and accumulation. The model is said to be analytical in nature as each mode is represented by one single expression without the involvement of any numerical integration. Quantum confinement effect has also been considered in the model. The model has been validated with the help of simulation results from Technology Computer Aided Design (TCAD) device simulator. For the purpose of validation, the model is compared with simulation results as well as experimental results from existing literature. The average deviation from experimental results is 1.425% and the maximum deviation is 1.7%.