A novel analytical current model for hexagonal shaped double gate JLFET

Abstract

A fully analytical mathematical model for drain current for the junctionless field effect transistor (JLFET) with a hexagon-shaped body has been developed and reported in this work. The model is designed to be valid in the four modes of operation- Subthreshold, bulk current, flat band, and accumulation modes. The model is based on channel resistance. Resistance for each of the three-layer types—neutral, depletion, and accumulation layers is determined first, and then the equivalent channel resistance. The subthreshold region comprises only the depletion layer, while in the bulk current mode, the overall resistance will be the parallel combination of the neutral layer and depletion layer resistances. In accumulation mode, the total resistance is derived by combining the accumulation and neutral resistances in parallel, whereas in flat band mode, only the neutral layer is present. After calculating the body's equivalent resistance, the potential model and Ohm's law were used to generate the drain current expression. The model is appropriate for compact modeling and has a completely analytical nature. The analytical drain current model is validated with technology computer-aided design (TCAD) numerical simulator and experimental results by comparing the device’s output and transfer characteristics acquired from the mathematical expressions with those computed by TCAD simulations and experimental results. The model seems to agree well with the results obtained from both TCAD simulations and experiments.