A Review: The Response of Fluorine Implantation on Silicon PMOS at Poly-Si Gate, P+/N-junction, and Ti-Salicide

Abstract

This review paper offers a comprehensive overview of fluorine implantation's impact on three critical device areas: Poly-Si/SiO2
interface, P+/N-junction, and Ti-salicide formation. The study reveals that fluorine facilitates bond strain relaxation at the SiO2-Si
interface, reduces transient enhanced diffusion of boron in P+/N-junction, and promotes the formation of C-54 phase titanium silicides at Ti-salicide. These findings highlight fluorine implantation's potential to enhance electrical characteristics such as low junction leakage, low sheet resistance and reliability stress in NBTI/TDDB. However, the study also indicates that the implantation doses of fluorine atoms need to be controlled, as low doses decrease interface trap density while higher doses have the opposite effect. This review offers invaluable insights into optimizing fluorine implantation to balance its positive and negative effects on device fabrication. Moreover, the review paper also proposes future directions for optimizing fluorine implant conditions to broaden the understanding of fluorine implantation and opens up new avenues to explore its potential in semiconductor device fabrication.