Effect of rotational speed on physical properties of Cu doped SnO2 thin films

Authors

  • T. Bhima Raju Department of Engineering Physics, AUCE (A), Andhra University, Visakhapatnam-530045, A.P, India and Department of Physics, ANITS (A), Sangivalasa-531162, Visakhapatnam, A.P, India
  • Y. Ramakrishna Department of Engineering Physics, AUCE (A), Andhra University, Visakhapatnam-530045, A.P, India
  • B. Rajesh Kumar Department of Physics, School of Sciences, GITAM (Deemed to be University), Visakhapatnam-530045, A.P, India

Keywords:

Cu doped SnO2 thin films, X-ray diffraction, Surface morphology, Atomic force microscopy, Optical properties

Abstract

The sol-gel spin-coating (SGSC) technique, with rotational speed varied from 2000 to 3500 rpm, was employed to prepare Cu-doped SnO2 (CTO) films. XRD patterns of the CTO films show a polycrystalline tetragonal structure. The reduction in crystallite size from 36 to 21 nm with increasing rotational speed supports the increase in microstrain. The rise in rotational speed promotes the formation of smaller crystallites because of rapid film solidification, which in turn increases microstrain owing to enhanced lattice distortions and grain-boundary effects. The morphology of the CTO films shows homogeneous growth with a spherical shape, and agglomerated grains were observed at higher rotational speeds. Cu-doped SnO2 prepared at 3500 rpm shows an optimum transmittance of 82% in the visible region. The optical band-gap energy of Cu-doped SnO2 films increased from 3.20 to 3.65 eV because of the Burstein-Moss effect. This study provides a novel correlation between lattice distortion (via basal plane angle) and surface roughness evolution in Cu-doped SnO2 thin films, offering deeper insights into the structural-morphological relationship influencing their physical properties.

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Published

02-07-2026

How to Cite

[1]
T. Bhima Raju, Y. Ramakrishna, and B. Rajesh Kumar, “Effect of rotational speed on physical properties of Cu doped SnO2 thin films”, IJNeaM, vol. 19, no. 3, pp. 431–436, Jul. 2026.

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