Annealing Temperature Effect on TeO2 Thin Films for Optical Detection Devices

Abstract

Physical vapor deposition method was used for the preparation of nanostructured TeO2. Different morphologies of TeO2 are synthesized using a physical evaporation method with Te powder as the source material and quartz SiO2 as the growth substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and ultraviolet-visible (UV–Vis) analyses are used to characterize the structural, morphological, and optical properties of the TeO2 products obtained. By varying the annealing temperature, different morphology of TeO2 structures is investigated. TeO2 nanostructure progress is initiated by the crystallization of particles. Different temperatures have different effects on structures, which are discussed. The films as deposited nature was amorphous; crystallization occurred at a higher annealing temperature (175 oC). With an increase in annealing temperature, the TeO2 films grain size increased. The research also points to the impact of post-deposition thermal annealing temperatures in excess of 100 °C in enhancing TeO2 film characteristics.