Performance evaluation of novel mid-insulation gate junctionless transistors at the device and circuit level

Abstract

This work proposes a novel gate-engineered Mid-Insulation Gate Junctionless Transistor (MiG-JLT) and presents a comparative per

This work proposes a novel gate-engineered Mid-Insulation Gate Junctionless Transistor (MiG-JLT) and presents a comparative performance evaluation against the conventional Symmetric Double Gate Junctionless Transistor (SDG-JLT). Under identical physical parameters, the proposed MiG-JLT demonstrates a nearly 35% enhancement in ON-state current, achieving an ON current of approximately 2.5  10^–5 A and an I_ON/I_OFF ratio of about 2.5  10⁸. For a silicon body thickness of 10 nm, the device exhibits a peak transconductance of ~7  10^–5 S, and a drain conductance of ~1.3  10^–4 S at low drain bias, confirming its improved analog performance. The effects of doping concentration, surface potential distribution, and channel width are systematically analyzed. Circuit-level inverter analysis further demonstrates enhanced transfer and switching characteristics. Overall, the proposed MiG-JLT shows strong potential for high-performance nanoscale and SPICE-compatible device applications.

formance evaluation against the conventional Symmetric Double Gate Junctionless Transistor (SDG-JLT). Under identical physical parameters, the proposed MiG-JLT demonstrates a nearly 35% enhancement in ON-state current, achieving an ON current of approximately 2.5  10^–5 A and an I_ON/I_OFF ratio of about 2.5  10⁸. For a silicon body thickness of 10 nm, the device exhibits a peak transconductance of ~7  10^–5 S, and a drain conductance of ~1.3  10^–4 S at low drain bias, confirming its improved analog performance. The effects of doping concentration, surface potential distribution, and channel width are systematically analyzed. Circuit-level inverter analysis further demonstrates enhanced transfer and switching characteristics. Overall, the proposed MiG-JLT shows strong potential for high-performance nanoscale and SPICE-compatible device applications.