Correlation of Target and Substrate Rotation Speeds on the Growth of Aluminum Nitride Thin Film Using an Industrial-Grade Sputtering System

Abstract

Aluminum Nitride (AlN) thin films are widely used in microelectronics, piezoelectric sensors, and high-power devices because of their good electrical, mechanical, and thermal properties. Among various deposition methods, radio frequency (RF) magnetron sputtering is considered advantageous due to its ability to fabricate homogeneous, high-quality layers with strong adhesion. However, achieving optimal film properties in large-scale deposition, particularly with industrial-grade 12-inch sputtering targets, requires precise control over process parameters, including target and substrate rotation. While rotation dynamics significantly influence film thickness, surface topology, and crystallinity properties, their effects in large-area deposition remain insufficiently explored. This study examines how target/substrate rotation speeds (10/5, 15/5, 0/0, 5/5, 10/10, 5/10, and 5/15 rpm) affect the film thickness, surface topology, and crystallinity characteristics of AlN thin films. The results show that balanced rotation, especially at 10/10 rpm, produces films with superior thickness uniformity and crystallinity, making it optimal for large-area AlN deposition. Therefore, these findings offer valuable insights into improving AlN film quality for larger wafer sizes in industrial applications.