Microwave plasma-enhanced chemical vapor deposition growth of graphene nanowalls on varied substrates: A comparative study

Rucheng Zhu; Riteshkumar Vishwakarma; Haibin Li; DeQuan Yao; Masayoshi Umeno; Tetsuo Soga

doi:10.58915/ijneam.v18i1.1699

Authors

Rucheng Zhu C’s Techno Inc., Co-operative Research Center for Advanced Technology, Nagoya Science Park, Moriyama-ku, Nagoya Aichi 4630018, Japan and Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya Aichi 466-8555, Japan
Riteshkumar Vishwakarma C’s Techno Inc., Co-operative Research Center for Advanced Technology, Nagoya Science Park, Moriyama-ku, Nagoya Aichi 4630018, Japan
Haibin Li Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya Aichi 466-8555, Japan
DeQuan Yao Santec Holdings Corporation 5823 Ohkusa-Nenjozaka, Komaki, Aichi 485-0802, Japan
Masayoshi Umeno C’s Techno Inc., Co-operative Research Center for Advanced Technology, Nagoya Science Park, Moriyama-ku, Nagoya Aichi 4630018, Japan
Tetsuo Soga Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya Aichi 466-8555, Japan

DOI:

https://doi.org/10.58915/ijneam.v18i1.1699

Abstract

We explored the growth rate and morphological characteristics of graphene nanowalls (GNWs) on copper (Cu), stainless steel (SUS), quartz and silicon (Si) substrates by changing the growth time using microwave plasma-enhanced chemical vapor deposition (MWPCVD). Furthermore, we investigated the impact of catalytic and non-catalytic substrates on the growth features of GNWs. The properties of GNWs were characterized using scanning electron microscopy (SEM) and Raman spectroscopy. The growth of GNWs occurred just after supplying the precursor on the Cu substrate, but those on SUS, quartz and Si delayed about 5 min, 10 min and 15 min, respectively, due to the low catalytic activity of the substrate. Once the growth started, there was not much of a difference in the growth rate. The average growth rate was about 2 nm/s. The crystallinity of GNW was improved with increasing growth time. It was found that Cu is the best substrate to get high-quality GNWs, but MWPCVD is a suitable technique to obtain GNWs on a variety of substrates at relatively low temperatures.