Comparative Study and Modeling of AlGaN/GaN Heterostructure HEMT and MOSHEMT Biosensors

Abstract

This paper presents a comprehensive comparative study and analytical modelling of electrical performance of AlGaN/GaN high-electron-mobility transistor (HEMT) and metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) biosensors. Sensing parameters such as the I-V characteristics and sensitivity parameter for biomolecules detection in the cavity region are taken into consideration. In this paper, the permittivity is varied according to the biomolecule to be sensed by the biosensor. The maximal variation of the electrical performance of the biosensor obtained is higher in HEMT as compared with MOSHEMT. The simulation results of the analytical model obtained by using MATLAB verified by a comparison with experimental data and atlas-technology computer aided design (Atlas-TCAD), and shown good agreement with each other. Thereby, we could improve the validity of the proposed model. The AlGaN/GaN HEMT have shown good sensing of 141.73 at biomolecular permittivity of 2.5 which can be used for biosensing applications effectively.