Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Siti Fatimah Abd Rahman, Mohd Syamsul, Hiroshi Kawarada, Alhan Farhanah Abd Rahim. Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device. IJNeaM [Internet]. 2024 Apr. 19 [cited 2024 May 20];17(2):204-10. Available from: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/684