Izwanizam Yahaya, A. H. Afifah Maheran, F. Salehuddin, and K. E. Kaharudin. “Design and Electrical Simulation of a 22nm MOSFET With Graphene Bilayer Channel Using Double High-ĸ Metal Gate”. International Journal of Nanoelectronics and Materials (IJNeaM) 15, no. 2 (October 24, 2024): 79–90. Accessed April 2, 2025. https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1394.