Driss Bouguenna, Abbès Beloufa, Khaled Hebali, and Sajad Ahmad Loan. “Investigation of the Electrical Characteristics of AlGaN AlN GaN Heterostructure MOS-HEMTs With TiO2 High-K Gate Insulator”. International Journal of Nanoelectronics and Materials (IJNeaM) 16, no. 3 (October 22, 2024): 607–620. Accessed November 20, 2025. https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1325.