Naeemul Islam, et al. “Enhanced Breakdown Voltage of AlGaN GaN MISHEMT Using GaN Buffer With Carbon-Doping on Silicon for Power Device”. International Journal of Nanoelectronics and Materials (IJNeaM) , vol. 17, no. 2, Apr. 2024, pp. 204-10, doi:10.58915/ijneam.v17i2.684.