Mohamad Adzhar Md Zawawi, et al. “Design and Fabrication of a Very Low Peak Voltage InGaAs AlAs Resonant Tunneling Diode Incorporating a Highly Strained Quantum Well”. International Journal of Nanoelectronics and Materials (IJNeaM) , vol. 19, no. 4, Oct. 2026, pp. 661-7, https://ejournal.unimap.edu.my/index.php/ijneam/article/view/3674.