Tung Kok Siong, et al. “Simulation and Modeling of Gallium Nitride High-Electron Mobility Transistors for Non-Alloyed Ohmic Contacts”. International Journal of Nanoelectronics and Materials (IJNeaM) , vol. 18, no. 2, Apr. 2025, pp. 222-9, doi:10.58915/ijneam.v18i2.2066.