Driss Bouguenna, Abbès Beloufa, Khaled Hebali, and Sajad Ahmad Loan. “Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs With TiO2 High-K Gate Insulator”. International Journal of Nanoelectronics and Materials (IJNeaM), vol. 16, no. 3, Oct. 2024, pp. 607-20, doi:10.58915/ijneam.v16i3.1325.