Driss Bouguenna, Abbès Beloufa, Khaled Hebali, and Sajad Ahmad Loan, “Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs with TiO2 High-k Gate Insulator”, IJNeaM, vol. 16, no. 3, pp. 607–620, Oct. 2024.