Mohamad Adzhar Md Zawawi (2026) “Design and fabrication of a very low peak voltage InGaAs/AlAs resonant tunneling diode incorporating a highly strained quantum well”, International Journal of Nanoelectronics and Materials (IJNeaM) , 19(4), pp. 661–667. Available at: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/3674 (Accessed: 13 October 2026).