NAEEMUL ISLAM; MOHAMED FAUZI PACKEER MOHAMED; SITI FATIMAH ABD RAHMAN; MOHD SYAMSUL; HIROSHI KAWARADA; ALHAN FARHANAH ABD RAHIM. Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 17, n. 2, p. 204–210, 2024. DOI: 10.58915/ijneam.v17i2.684. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/684. Acesso em: 19 dec. 2024.