NILAVENTHIRAN VESPANATHAN; NORAINI OTHMAN; S. N. SABKI; ALHAN FARHANAH ABD RAHIM. Impact of Nanowire Radius and Channel Thickness with High-k Gate Dielectric in GAA-JLT. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 16, n. December, p. 317–322, 2023. DOI: 10.58915/ijneam.v16iDECEMBER.413. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/413. Acesso em: 22 nov. 2024.