LAI CHIN HOONG; SHAHRIR R. KASJOO. Effect of Structural Parameters on Current-Voltage Properties of GaAs-based Resonant Tunneling Diodes Using Device Simulator. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 16, n. December, p. 59–64, 2023. DOI: 10.58915/ijneam.v16iDECEMBER.386. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/386. Acesso em: 24 nov. 2024.