YI LIANG TAN et al. Enhancing Electron Transport in Silicon Self-Switching Devices: A Study on Triangular Barrier-Induced Ballistic Effects. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 19, n. June, p. 107–117, 2026. DOI: 10.58915/ijneam.v19iJune.3381. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/3381. Acesso em: 16 jul. 2026.