LEE BOON THUAN; M.K. MD ARSHAD; W.M.W NORHAIMI. Improvement of gate oxide thickness uniformity in advanced U-MOSFETs through multi-layer furnace oxidation. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 19, n. 2, p. 311–321, 2026. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/3151. Acesso em: 28 apr. 2026.