RIKHIT SWARGIARY; KAUSHIK CHANDRA DEVA SARMA. Analytical potential model of raised source drain double gate junctionless field effect transistors. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 19, n. 1, p. 17–25, 2026. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/2882. Acesso em: 21 jan. 2026.