RIKHIT SWARGIARY; KAUSHIK CHANDRA DEVA SARMA. Analytical potential model of raised source drain double gate junctionless field effect transistors. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 19, n. 1, p. 17–25, 2026. DOI: 10.58915/ijneam.v19i1.2882. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/2882. Acesso em: 2 apr. 2026.