NURUL AMIRAH ZULKIFLE; MUHAMMAD HAFIZ ABD AZIZ; MUHAMMAD NAJMI MOHD SETH; NUR SYAMIMI NOORASID; ORAS AHMED AL-ANI; MERVE YAKULT; FAIZ ARITH. Numerical study on thermal stability performance of 4H-SiC MOSFETs. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 19, n. 1, p. 1–7, 2026. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/2880. Acesso em: 21 jan. 2026.