EJOURNAL-UNIMAP, ejournal- unimap. Taguchi Method for p-MOS Threshold Voltage Optimization with a Gate Length of 22nm. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 16, n. 1, p. 1–9, 2023. DOI: 10.58915/ijneam.v16i1.277. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/277. Acesso em: 22 nov. 2024.