VISHAL SHARMA; AMIT CHAUDHRY. Mathematical modeling of a SiGe HBT: Effect of Ge profiles. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 18, n. 4, p. 669–679, 2025. DOI: 10.58915/ijneam.v18i4.2672. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/2672. Acesso em: 7 nov. 2025.