TUNG KOK SIONG; MOHAMED FAUZI PACKEER MOHAMED; SITI FATIMAH ABD RAHMAN; MOHD SYAMSUL; AHMAD SHUHAIMI ABU BAKAR; ALHAN FARHANAH ABD RAHIM. Simulation and modeling of gallium nitride high-electron mobility transistors for non-alloyed ohmic contacts. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 18, n. 2, p. 222–229, 2025. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/2066. Acesso em: 26 apr. 2025.