ANJANMANI BARO; KAUSHIK CHANDRA DEVA SARMA. A full range fully analytical drain current model of double gate junctionless field effect transistor with triangle shaped spacer. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 18, n. 2, p. 196–203, 2025. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/2058. Acesso em: 24 apr. 2025.