ALI SAEED ALZAHRANI. Design and simulation of gate and channel engineered dopingless tunnel FET. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 18, n. 1, p. 118–124, 2025. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1726. Acesso em: 19 jan. 2025.