IZWANIZAM YAHAYA; A. H. AFIFAH MAHERAN; F. SALEHUDDIN; K. E. KAHARUDIN. Design and Electrical Simulation of a 22nm MOSFET with Graphene Bilayer Channel using Double High-ĸ Metal Gate. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 15, n. 2, p. 79–90, 2024. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1394. Acesso em: 22 nov. 2024.