K.Y KOAY; M.F.M FATHIL; M. NUZAIHAN; R. M AYUB; M.K. MD ARSHAD. Numerical Simulation on the Impact of Back Gate Voltage in Thin Body and Thin Buried Oxide of Silicon on Insulator (SOI) MOSFETs. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 16, n. 4, p. 819–826, 2024. DOI: 10.58915/ijneam.v16i3.1349. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1349. Acesso em: 22 nov. 2024.