A.H AFIFAH MAHERAN; M. PRITIGAVANE; N.H.N.M. NIZAM; F. SALEHUDDIN; N. SABANI. Taguchi Method Statistical Analysis on Characterization and Optimization of 18-nm Double Gate MOSFETs. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 17, n. 4, p. 549–555, 2024. DOI: 10.58915/ijneam.v17i4.1282. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1282. Acesso em: 18 dec. 2024.