A. REVATHY; C.S. BOOPATHI. Ultra-wide Bandgap AlGaN Channel HEMTs for Portable Power Electronics Applications. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 16, n. 2, p. 301–312, 2024. DOI: 10.58915/ijneam.v16i2.1225. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1225. Acesso em: 21 nov. 2024.