LEE, S. L.; TAN, C. L.; MOHAMED, M. F. P. A Review: The Response of Fluorine Implantation on Silicon PMOS at Poly-Si Gate, P+/N-junction, and Ti-Salicide . International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 18, n. 3, p. 433–442, 2025. DOI: 10.58915/ijneam.v18i3.1204. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1204. Acesso em: 13 aug. 2025.