ZAIDI, H. Z.; RADZALI, R.; MAHMOOD, A.; MOHD DAUD, A. N.; ABD RAHIM, A. F.; MOHAMAD HADIS, N. S.; ABDULLAH, M. H.; ABU BAKAR, A. Properties of porous gallium nitride under varying etching durations of low temperature photoelectrochemical etching. International Journal of Nanoelectronics and Materials (IJNeaM) , [S. l.], v. 18, n. 3, p. 341–348, 2025. DOI: 10.58915/ijneam.v18i3.1181. Disponível em: https://ejournal.unimap.edu.my/index.php/ijneam/article/view/1181. Acesso em: 13 aug. 2025.