Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Siti Fatimah Abd Rahman, Mohd Syamsul, Hiroshi Kawarada and Alhan Farhanah Abd Rahim 2024. Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device. International Journal of Nanoelectronics and Materials (IJNeaM) . 17, 2 (Apr. 2024), 204–210. DOI:https://doi.org/10.58915/ijneam.v17i2.684.