[1]
Lee, S.L. et al. 2025. A Review: The Response of Fluorine Implantation on Silicon PMOS at Poly-Si Gate, P+/N-junction, and Ti-Salicide . International Journal of Nanoelectronics and Materials (IJNeaM) . 18, 3 (Aug. 2025), 433–442. DOI:https://doi.org/10.58915/ijneam.v18i3.1204.